for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information 3135gn-280lv 280 watts 50 volts 200 ? s, 20% s-band radar 3100 - 3500 mhz electrical characteristics @ 25 ? c symbol characteristics test conditions 1 min typ max units pout output power pin=14.1w, freq=3100,3300,3500 mhz 280 330 w gp power gain pin=14.1w, freq=3100,3300,3500 mhz 13 13.7 db ? d drain efficiency pin=14.1w, freq=3100,3300,3500 mhz 50 58 % dr droop pin=14.1w, freq=3100,3300,3500 mhz 0.2 0.5 db vswr-t load mismatch tolerance pin=14.1w, freq=3100 mhz 3:1 ? jc thermal resistance pulse width=200 ? s, duty=20% .39 c/w 1 bias condition: vdd=+50v, idq=100ma constant current (vgs= -2.0 ~ -4.5v typical) functional characteristics @ 25 ? c i d(off) drain leakage current v gs = -8v, v d = 50v 36 ma i g(off) gate leakage current v gs = -8v, v d = 0v 6 ma bv dss drain-source breakdown voltage v gs =-8v, i d = 36ma 125 v general description the 3135gn-280lv is an inter nally matched, common source, class ab, gan on sic hemt transistor capable of providing over 13 db gain, 280 watts of pulsed rf output power at 200 ? s pulse width, 20% duty factor across the 3100 to 3500 mhz band. this hermetically sealed transistor is utilizes gold metallizat ion and eutectic attach to provide highest reliability and superior ruggedness. market application C high power s-band pulsed radar case outline 55-kp common source absolute maximum ratings maximum power dissipation device dissipation @ 25 ? c 616 w maximum voltage and current drain-source voltage (v dss ) 125 v gate-source voltage (v gs ) -8 to +0 v maximum temperatures storage temperature (t stg ) -55 to +125 ? c operating junction temperature +250 ? c downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information 3135gn-280lv 280 watts 50 volts 200 ? s, 20% s-band radar 3100 - 3500 mhz typical broad band performace data frequency pin (w) pout (w) id (a) rl (db) d (%) gain (db) droop (db) 3100 mhz 14.1 324 2.49 -8.5 54 13.6 0.2 3300 mhz 14.1 355 2.43 -8.5 60 14.0 0.2 3500 mhz 14.1 316 2.20 -7.0 60 13.5 0.2 downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information 3135gn-280lv 280 watts 50 volts 200 ? s, 20% s-band radar 3100 - 3500 mhz 55-kp package dimension dimension min (mil) min (mm) max (mil) max (mm) a 370 9.40 372 9.44 b 498 12.65 500 12.7 c 700 17.78 702 17.83 d 830 21.08 832 21.13 e 1030 26.16 1032 26.21 f 101 2.56 102 2.59 g 151 3.84 152 3.86 h 385 9.78 387 9.83 i 130 3.30 132 3.35 j 003 .076 004 0.10 k 135 3.43 137 3.48 l 105 2.67 107 2.72 m 085 2.16 86 2.18 n 065 1.65 66 1.68 downloaded from: http:///
for the most current data, consult microsemis website: www.microsemi.com specifications are subject to chan ge, consult the rfis factory at (408) 986-8031 for the latest information 3135gn-280lv 280 watts 50 volts 200 ? s, 20% s-band radar 3100 - 3500 mhz the information contained in the document is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, di stributed or disclosed or used without th e express duly signed written consent of microsemi if the recipient of this document has entered into a disclosure agreement with microsemi, then the terms of such agreement will also apply . this document and the information contained herein may not be modifi ed, by any person other than authorized personnel of microsemi. no license under any patent, copy right, trade secret or other intellectual property right i s granted to or conferred upon you by disclosure or delivery of the information, either expre ssly, by implication, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by micr osemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, func tionality and performance of its products at anytime without any notice. this product has been subject to limited test ing and should not be used in conjunction with life-support or other mission-criti cal equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including li ability or warranties relating to fitness for a particular purpos e, merchantability, or infringement of any patent, copyright or ot her intellectual property right. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp. revision history revision date affected section(s) description 1.0 11-20-14 - initial preliminary release downloaded from: http:///
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